A STEM-based Path Towards Atomic-scale Silicon-based Devices

Amorphous silicon based betavoltaic devices

Hydrogenated amorphous silicon betavoltaic devices are studied both by simulation and experimentally. Devices exhibiting a power density of 0.1 W/cm 2 upon Tritium exposure were fabricated. However, a significant degradation of the performance is taking place, especially during the first hours of the exposure. The degradation behavior differs from sample to sample as well as from published resu...

Interface engineering of spin - tunnel contacts to silicon Towards silicon - based spintronic devices

Atomic scale memory at a silicon surface

The limits of pushing storage density to the atomic scale are explored with a memory that stores a bit by the presence or absence of one silicon atom. These atoms are positioned at lattice sites along self-assembled tracks with a pitch of five atom rows. The memory can be initialized and reformatted by controlled deposition of silicon. The writing process involves the transfer of Si atoms to th...

Quantum transport through C48N12 based atomic devices.

We report numerical calculations on the quantum transport through C48N12 based devices from first principles. We find that the transport properties are very sensitive to orientations of the molecules to the electrode. Different orientations can give rise to semiconducting to metallic behaviors. Our results show that the charge transfer which can be tuned by the gate voltage plays an important r...

Modeling Spin-Based Devices in Silicon

Continuous miniaturization of CMOS devices made the breath taking increase in performance of integrated circuits become a magnificent reality. Numerous tough problems were solved on this exciting journey; however, growing technological challenges and soaring costs will gradually bring CMOS scaling to an end. This puts foreseeable limitations to the future performance increase, and research on a...